Inc6006as1
WebFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Datasheet(PDF) - Isahaya Electronics Corporation - INC6006AS1 Datasheet, FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE, Isahaya Electronics Corporation - 2SC5383_10 Datasheet, Isahaya Electronics Corporation - 2SC5814 Datasheet WebINA6006AP1 Datasheet (PDF) INA6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6006AP1 is a …
Inc6006as1
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WebUltra Super Mini. SC-59. SC-62 WebHigh voltage VCEO = -150V Low voltage VCE(sat) = -0.5V(MAX) Small capacitance Cob=2.8pF(TYP) Complementary INC6006AS1. APPLICATION. PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Peak collector current Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature
WebINA6006AS1 is a silicon PNP transistor. It is designed with high voltage. FEATURE ・High voltage VCEO = -150V ・Low voltage VCE(sat) = -0.5V(MAX) ・Small capacitance Cob=2.8pF(TYP) ・Complementary ： INC6006AS1 APPLICATION Hi-Fi Audio, High voltage switching. OUTLINE DRAWING UNIT：mm MAXIMUM RATING（Ta=25℃） http://www.idc-com.cn/product/Search/Discreet/en/111/INC6006AS1
INC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for easy mounting. ・High voltage VCEO = 160V ・Low voltage VCE(sat) = 0.2V(MAX) ・Complementary ： INA6006AS1 APPLICATION High voltage switching. OUTLINE DRAWING UNIT：mm MAXIMUM RATING（Ta=25℃） WebINC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 …
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WebDownload INC6006AS1 Datasheet: Specifications. Isahaya Package: Micro: JEITA Package: JEDEC Package: TO-92S: AEC correspondence: Type: NPN: Collector to Emitter voltage?VCEO(V) 160: Collector current?IC(A) 0.1: Collector dissipation?PC(mW) 600: DC forward current gain hFE: 72 ? 330: Datasheet first page Image. circuit of length 0WebINC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for eas y mounting. ・High voltage V. CEO = 160V ・Low voltage V. CE(sat) = 0.2V(MAX) ・Complementary ： INA6006AS1 . APPLICATION . High voltage switching. circuit of kerry rally 2023WebFOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO ETHERNET Datasheet(PDF) - List of Unclassifed Manufacturers - 2SC5482 Datasheet, FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO, Isahaya Electronics Corporation - 2SC5397 Datasheet, Isahaya Electronics … circuit of led driverWebINC6006AS1 Transistor. Isahaya Package : Micro ; JEITA Package : ; JEDEC Package : TO-92S ; AEC correspondence : ; Type : NPN ; Collector to Emitter voltage?VCEO(V) : 160 ; … circuit of life willy sansenhttp://allparts.cn/parts/list/I/i_00208.htm diamond cut window cleaning reviewsWebThe INA851 is the industry's first high-precision instrumentation amplifier with fully differential outputs. This device is optimized to drive inputs of modern high performance analog-to-digital converters (ADCs) with fully differential inputs. The INA851 operates over a very-wide, single-supply or dual-supply range. The diamond cut wine glassesWebAMPLIFY Datasheet(PDF) - Guangdong Kexin Industrial Co.,Ltd - 2SA1364 Datasheet, Low Frequency Power Amplify Applications, Isahaya Electronics Corporation - RT1A3906-T112 Datasheet, List of Unclassifed Manufacturers - 2SB1314 Datasheet diamond cut window tinting